- epitaxial parameters
- pl.характеристики эпитаксиальной кристаллизации
Англо-русский словарь промышленной и научной лексики. 2014.
epitaxial parameters
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Stranski-Krastanov growth — (SK growth, also Stransky Krastanov or Stranski Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as layer plus island growth , the SK mode follows a two step process:… … Wikipedia
Multiferroics — have been formally defined as materials that exhibit more than one primary ferroic order parameter simultaneously (i.e. in a single phase).[1] The four basic primary ferroic order parameters are ferromagnetism, ferroelectricity, ferroelasticity… … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Mercury probe — The Mercury Probe is an electrical probing device to make rapid, non destructive contact to a sample for electrical characterization. Its primary application is semiconductor measurements where time consuming metallizations or photolithographic… … Wikipedia
Lattice constant — The Lattice Constant refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a , b , and c . However, in the special case of cubic crystal… … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Microelectromechanical system oscillator — Microelectromechanical system (MEMS) oscillators are timing devices that generate highly stable reference frequencies. These reference frequencies are used to sequence electronic systems, manage data transfer, define radio frequencies, and… … Wikipedia
Zinc oxide — Other names Zinc white Calamine Identifiers … Wikipedia
Sputter deposition — is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a target, that is source, which then deposits onto a substrate, such as a silicon wafer. Resputtering is re emission of the… … Wikipedia
Micropipe — A micropipe, also called micropore, microtube, capillary defect or pinhole defect, is a crystallographic defect in a single crystal substrate. Today this is of great interest to makers of silicon carbide (SiC) substrates which are used in a… … Wikipedia
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia
